Semiconductor integrated circuit device

ABSTRACT

A memory macro is a combination of functional modules such as a main amplifier module, memory bank modules of which each memory bank operates independently, a power source circuit, etc. The storage capacity of the memory macro can be easily changed from a large capacity to a small one by changing the number of the memory bank modules. A control circuit in the memory bank modules of the memory macro has an additional address comparing function. Therefore, the same page can be accessed at high speed without providing any control circuit outside the memory macro. In addition, a module having a function such as a memory access sequence control is provided and, when memory access is made, identification information is issued at the time of inputting/outputting address or data. Therefore, high-speed memory access can be realized by checking the coincidence between the data and address with the ID and controlling the memory access sequence so that the address inputting order and data outputting order can be changed.

TECHNICAL FIELD

The present invention relates to a semiconductor integrated circuitdevice comprising highly integrated memories such as DRAM (DynamicRandom Access Memory) devices, and more particularly to an effectivetechnique applicable to a fast accessing method for highly integratedmemories.

BACKGROUND ART

In recent years, the high integration of LSI (Large Scaled IntegratedCircuit) devices has come to be possible along with the progress ofsemiconductor manufacturing techniques. This has also made it possibleto integrate both large capacity memories and large scaled logiccircuits together on one semiconductor chip. With such a semiconductorchip, it is easy to increase the number of data I/O lines to therebyimprove the data throughput between memory and logic circuit. This alsomakes it possible to reduce the power consumption of data I/O operationsmore and transfer data faster than in a case in which I/O pins providedoutside the semiconductor chip are driven. The advantages of such asemiconductor chip are thus expected to be used more and more in thefuture.

There is a semiconductor chip in which a large capacity memory, a largescaled logic circuit, and a fast operation cache memory are combined.This semiconductor chip is intended to use a cache memory for reducingthe difference of the operation speed between the large capacity memoryand the large scaled logic circuit. Such a semiconductor chip isdescribed, for example, in “an article by Toru Shimizu, et al., entitled“A Multimedia 32 b RISC Microprocessor with 16 Mb DRAM”, 1966 IEEEInternational Solid-State Circuits Conference, Digest of TechnicalPapers pp. 216-217 (hereafter, to be referred to as the prior arttechnique 1)”. According to this prior art technique 1, a 32-bitmicroprocessor, a 2 MB DRAM, and a 2 KB cache memory are connected toeach other through a 128-bit wide internal bus. When 128-bit data istransferred, the operation is terminated in five cycles between themicroprocessor and the DRAM and in one cycle between the microprocessorand the cache memory. Consequently, while the cache memory is hit, thenumber of data transfer cycles can be reduced to ⅕.

DISCLOSURE OF THE INVENTION

For a memory to be mounted on a semiconductor chip that is realized, forexample, by the prior art technique 1, various functions such as thecontinuous reading function, cache function, access control function,etc., are indispensable. The capacity of the semiconductor chip mustalso be changed according to how the semiconductor chip is used.However, both large capacity memory and cache memory use many analogcircuits in a portion that requires fast operation required portionrespectively. When the function and capacity of a memory are to bechanged, therefore, the design of the memory itself must be updatedsignificantly even for a minor change.

Furthermore, in the case of a semiconductor chip realized, for example,by the prior art technique 1, it is very important to make the TAT (TurnAround Time) shorter between deciding on the specifications andcompleting of the product. In order to satisfy this requirement,therefore, the three requirements of enhanced functions, ease inchanging capacity, and a shorter TAT must be achieved together.

Furthermore, when a cache memory is used for fast memory accesses onsuch a semiconductor chip, a problem arises as follows. While cachememory is hit, the fast memory access is assured. Once a miss occurs,however, the main memory is accessed, which takes more time. This causesthe operation of the CPU (Central Processing Unit) to be limiteddominantly.

Generally, a DRAM can be accessed fast comparatively if consecutiveaddresses are accessed in a single page of the DRAM. If a different pageis accessed (a page miss occurs), however, the access becomes slow dueto the pre-charging of the object, etc., which are indispensable in sucha case. There is a method proposed for solving such a problem using amulti-bank structure, thereby hiding such a DRAM page miss. This methodis disclosed in the previous application(Japanese Patent Application No.08-301538 (filed on Nov. 13, 1996)) by some inventors of thisapplication.

The method disclosed in the previous application described above,however, cannot avoid such a page miss when in random memory accesses.

Under such circumstances, it is an object of the present invention tomake it easier to design a memory macro provided with various functionsand a variable capacity, which is integrated in a large scaled logiccircuit such as a microprocessor and an image processor.

It is another object of the present invention to provide a memory thatcan be interfaced easily with a large scaled logic circuit such as amicroprocessor and an image processor.

It is further another object of the present invention to provide amemory that can reduce problems such as a page miss, etc.

These, other, and further objects, as well as new features of thepresent invention will be apparent from the description and accompanyingdrawings in this application.

Some, representative items of the present invention disclosed in thisapplication will now be described briefly.

In order to compose a memory macro (MM) to be mounted in a semiconductorintegrated circuit device (chip), a data base (1) is prepared. The database (1) comprises such function blocks as memory bank modules (10, 11,and 12), a main amplifier module (13), a power supply module (14), acontroller module (15), etc. Each function block prepared for the database (1) is composed so as to allow power supply and signal lines to beconnected automatically when the function block is just disposedadjacent to others. This will make it possible to easily design a memorymacro provided with various functions and a variable capacity only bychanging the types and number of function blocks for composing a largecapacity memory and a cache memory respectively.

The controller (BKCONTH) in the memory bank module (11) is provided withan address comparing function (COMP), thereby composing the memory macro(MM3). This will make it possible to compose a memory macro that can beaccessed fast without providing any controller outside the memory macroitself when accesses are made to a single page.

The memory macro (MM4) is composed of a plurality of memory bank modules(11) and a controller (17) for controlling the memory bank modules. Thecontroller module (17) is composed so as to manage both address and databy adding an ID (identification) to both address and data so theycorrespond with each other. This will make it possible to change theaddress input order and the data output order, thereby outputtingearlier-prepared data earlier even when the address is entered after thecorresponding data if a page miss occurs, so that the memory accessbecomes faster.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a configuration of a memory macro and how the memory macro iscomposed.

FIG. 2 is a configuration of a DRAM bank module.

FIG. 3 is a configuration of a controller of the DRAM bank module.

FIG. 4 shows waveforms of the operation of the DRAM bank module.

FIG. 5 is an example of the connection between the DRAM bank module andan SRAM bank module.

FIG. 6 is a configuration of a cache bank module.

FIG. 7 is a block diagram of a hit/miss judging circuit and acontrolling circuit included in the cache bank module.

FIG. 8 shows waveforms of the operation of the cache bank module whenthe operation is judged as a hit.

FIG. 9 shows waveforms of the operation of the cache bank module whenthe operation is judged as a miss.

FIG. 10 is a block diagram of a main amplifier module.

FIG. 11 is a block diagram of a power supply circuit module.

FIG. 12 is an example of the connection between a write data buffermodule and the main amplifier module.

FIG. 13 is a block diagram of a memory macro (the first memory macroexample) that uses a DRAM bank module.

FIG. 14 is a block diagram of a bank controlling circuit module.

FIG. 15 shows waveforms of the first example of the memory macro.

FIG. 16 shows an example of the first address assignment example of thememory macro.

FIG. 17 shows waveforms of the operation of a memory macro (the secondmemory macro example) that uses an SRAM bank module.

FIG. 18 is a block diagram of a memory macro (the third memory macroexample) that uses a cache bank module.

FIG. 19 is a block diagram of a cache controller.

FIG. 20 shows waveforms of the operation of a memory macro in the thirdexample.

FIG. 21 shows an address assignment example of a memory macro in thethird example.

FIG. 22 shows the latency of a memory macro in the third example.

FIG. 23 is a block diagram of a memory macro (in the fourth example)that is provided with an access sequence controller with ID.

FIG. 24 is a block diagram of the access sequence controller with ID.

FIG. 25 shows waveforms of the operation of the memory macro in thethird example.

FIG. 26 shows waveforms of the operation of the cache bank module in thethird example of the memory macro.

FIG. 27 is a block diagram of the access sequence controller with ID inanother example.

FIG. 28 is a flowchart for issuing the address ID signal AID when theaddress signal ADDIN is entered.

FIG. 29 is a flowchart for issuing the data ID signal DID when data isoutput.

FIG. 30 is a block diagram of a table MM-TABLE.

FIG. 31 is a block diagram of a multi-processor system.

FIG. 32 is a flowchart for issuing the address ID signal AID when theaddress signal ADDIN is entered.

FIG. 33 is a flowchart for issuing the data ID signal DID when data isoutput.

FIG. 34 is a block diagram of a table M-TABLE.

FIG. 35 is a flowchart for controlling the processor using the addressID signal.

FIG. 36 is a flowchart for controlling the processor using the data IDsignal.

FIG. 37 is a block diagram of a table CPU-TABLE.

BEST MODE FOR CARRYING OUT THE INVENTION

(Configuration of a Memory Macro and How to Compose the Same)

FIG. 1 shows a configuration of the memory macro of the presentinvention and how to compose the memory macro. A central processing unitCPU, which is an example of a large scaled logic circuit and a memorymacro MM, which is an example of a large capacity memory, are integratedon a semiconductor integrated circuit device CHIP formed on asemiconductor substrate (on a chip). The semiconductor integratedcircuit device CHIP is manufactured with, for example, the CMOS(Complementary Metal Oxide Semiconductor) processing technique andsealed in a plastic package with a resin molding technique, etc.According to the size and type of such a logic circuit to be integratedwith the memory macro MM just like this chip, the capacity and speedrequired for the memory macro MM are varied largely, but the designingof the memory macro MM must be finished quickly.

A data base 1 for composing the memory macro MM is provided withfunction blocks (modules) realizing various functions. In other words,on the data base 1 are integrated a DRAM bank module 10 that uses DRAM(Dynamic Random Memory) memory cells consisting of one transistor andone capacitor respectively; a cache bank module 11 formed with the DRAMbank module 10 provided with a hit/miss judging function; an SRAM bankmodule 12 that uses SRAM (Static Random Access Memory) memory cellsconsisting of four or six transistors respectively; a main amplifiermodule 13 for exchanging data between a memory bank (DRAM bank 10, acache bank 11, an SRAM bank, etc.) and a device provided outside thememory macro MM; a power supply circuit module 14 for supplying power toeach of the modules composing the memory macro MM; a bank controllermodule 15; a cache controller module 16; an access sequence controllermodule with ID 17; a write data buffer module 18, etc.

Those function blocks are disposed side by side so that the necessarypower supply and signal lines, as well as data input/output lines ofthose function blocks are connected automatically.

Memory macros MM varied in both capacity and function respectively canthus be composed quickly, since the data base 1 is prepared as describedabove.

In addition, there is no need to modify any memory access requestdevices nor design any new interface circuits, since the interfacecircuit used between memory and memory access request device is preparedin the object memory macro. The memories included in the memory macroare, for example, a bank controller module 15, a cache controller module16, an ID attached access sequence controller module 17, a write databuffer module 18, etc.

In order to compose such a memory macro MM provided with predeterminedfunctions, therefore, it is only necessary to select necessary functionblocks from the data base 1 and just dispose those function blocks.Hereunder, each of the memory macros MM1, MM2, MM3, and MM4 shown inFIG. 1 will be described briefly.

(1) Memory Macro MM1

The memory macro MM1 comprises a DRAM bank module 10, a main amplifiermodule 13, a power supply circuit module 14, a bank controller module15, and a write data buffer module 18 selected respectively from thedata base 1. Those function blocks are designed so as to be wiredautomatically as needed when they are disposed side by side. If thosefunction blocks are disposed as shown in FIG. 1, therefore, the memorymacro MM1 that uses DRAM will be composed easily.

For example, the positions of the power supply lines of the DRAM bankmodule 10, the main amplifier module 13, the power supply circuit module14 are all common to their function block, so that the power supplylines of those function blocks can be connected automatically when theyare just disposed as predetermined as shown in FIG. 1.

The data input/output lines of those function blocks are also connectedvia a global bit line GBL (also referred to as a common bit line and acommon data line) respectively disposed at a predetermined position foreasier connection. Such line connections will be described below more indetail.

Since such the commonality in those wiring positions makes it easier toadd and modify each of those function blocks, it is also easy to change,for example, the capacity of a memory. In FIG. 1, if the memory capacityof a DRAM bank module 10 used for the memory macro MM1 is 256K bits, thetotal capacity of the memory macro MM1 becomes 1M bits. If a memorymacro of 2M bits in capacity is needed, therefore, the memory macro canbe composed with 8 DRAM bank modules 10. If only a memory capacity of512K bits is needed for an object memory macro, only two DRAM bankmodules 10 are needed.

The memory macro MM1 comprises three types of modules (the DRAM bankmodule 10, the power supply module 14, and the main amplifier module 13)such way, so the configuration of the memory macro MM1 can be minimized,thereby its memory capacity is changed easily. Such the memory macroconfiguration will thus be suitable for a memory of a large capacity anda minimized area.

(2) Memory Macro MM2

The memory macro MM2 comprises a DRAM bank module 10, an SRAM bankmodule 12, a main amplifier module 13, a power supply circuit module 14,a bank controller module 15, and a write data buffer module 18 selectedrespectively from the data base 1.

Since the operation of the SRAM bank module 12 is fast, it is possibleto compose a large capacity memory provided with a cache function usingthe SRAM bank module 12. Since the SRAM portion to be accessed fastcomparatively and the DRAM portion to be accessed rather slowly areintegrated in different address ranges, the SRAM portion is composed soas to function as a so-called cache, which is to be accessed fast. Ifthe memory capacity is to be increased, it is only needed to increasethe number of the DRAM bank modules 10. If the cache capacity isreduced, thereby reducing the necessary chip area, therefore, it is onlyneeded to reduce the two SRAM bank modules 12 only to one. The memorymacro MM2 is provided with such a cache function and the capacity of thecache can thus be changed easily.

(3) Memory Macro MM3

The memory macro MM3 is a memory macro provided with a cache function.The memory macro MM3 comprises a cache bank module 11, a main amplifiermodule 13, a power supply module 14, a cache controller module 16, and awrite data buffer module 18 selected respectively from the data base 1.

The memory macro MM3 controls the cache bank module 11 using the cachecontroller module 16, thereby realizing the cache function. In otherwords, when data exist in the same word line (the same page), the datacan be accessed faster.

Just like the DRAM bank module 10, the cache bank module 11 is a memorybank module using DRAM memory cells. The cache bank module 11 can thusbe said to be a kind of a DRAM memory bank provided with a hit/missjudging circuit incorporated in its bank, and it uses a sense amplifierblock SA as a cache memory. With this hit/miss judging circuitincorporated in its bank, the cache controller module 16 can be reducedin size. The cache bank module 11 will therefore be suitable especiallyfor a small capacity memory macro for which a cache function isindispensable. When compared with the memory macro MM2 composed of theDRAM bank module 10 and the SRAM bank module 12, this memory macro MM3provided with a cache function can be composed at a smaller chip area.The memory macro MM3 provided with such a cache function will thus beintegrated with a newly designed arithmetic circuit very suitably,thereby avoiding integration of an existing system provided with a cachefunction on a chip.

(4) Memory Macro MM4

This memory macro MM4 is provided with a cache function and comprises acache bank module 11, a main amplifier module 13, a power supply circuitmodule 14, an access sequence controller module with ID 17, and a writedata buffer module 18 selected respectively from the data base 1.

The memory macro MM4 issues identification information (ID) for eachentered address so that the ID is output together with the correspondingdata. Receiving the ID, the central processing unit CPU can know thecorrespondence between received address and data. This processing willbe described later more in detail. The memory macro MM4 changes addressinput order and data output order, thereby outputting first-prepareddata first. This processing makes it possible to transfer dataeffectively even when a hit-miss occurs in the cache (when datum is notfound in the same line).

As described above for the memory macros MM1, MM2, MM3, and MM4, it ispossible to compose a memory macro provided with predetermined functionsand a predetermined capacity by combining various function blocksprepared in the memory macro composing data base 1 beforehand accordingto the target application, as well as by changing the number of thosefunction blocks. It is also possible to prepare various function blocksin the data base 1 in addition to those described above Hereunder, somerepresentative function blocks for composing such a memory macro will bedescribed in detail.

<<DRAM Bank Module>>

FIG. 2 shows a block diagram of this DRAM bank module 10. The DRAM bankmodule 10 comprises a memory cell array CA, a sense amplifier block SA,a Y decoder YD, an X decoder AD, a controller BKCONT, power supplyingline nodes PL, word lines WD, and a global bit line GBL.

The memory cell array CA comprises a plurality of word lines WD, aplurality of bit line pairs, and a plurality of dynamic memory cells(DRAM memory cells) disposed at each intersection point of those wordlines and bit line pairs. Each memory cell comprises a transistor and acapacity. Each bit line pair is connected to the sense amplifier blockSA.

Although not illustrated in FIG. 2, the sense amplifier block SAincludes a pre-charging circuit for reducing the voltage of each bitline pair to a half of the supply voltage, an equalizing circuit forequalizing the potential among the bit line pairs, and sense amplifiersfor amplifying the potential of a bit line pair respectively.

Although not illustrated in FIG. 2, the Y decoder includes a columnswitch (Y switch) for selecting the output of the sense amplifier blockSA and a decoding circuit for generating a selection signal forcontrolling the column switch. The decoding circuit receives part (Yaddress) of the address signal ADD.

The X decoder AD receives part (X address) of the address signal ADD,which is decoded so as to select a word line WD.

FIG. 3 shows a block diagram of the controller BKCONT. The controllerBKCONT comprises a timing generating circuit TIM, an X-related controlcircuit XCONT, and a Y-related control circuit YCONT. The control signalCBANK includes the clock signal CK, the bank selection signal BS, theread/write selection signal RW, the refresh request signal REF, etc. Thetiming generating circuit TIM receives the clock signal CLK, the bankselection signal BS, the read/write selection signal RW, etc., therebygenerating timing signals necessary for the X-related control circuitXCONT and the Y-related control circuit YCONT. The timing generatingcircuit TIM also generates the ready signal RDY for notifying eachexternal device that data is ready to be read/written or a refresh cycleis ended. The X-related and Y-related control circuits XCONT and YCONTare composed so as to generate control signals XSIG and YSIG necessaryfor internal operations of the DRAM bank module 10 respectively.

At least, some of the power supply lines connected to the powersupplying line node and the global bit line GBL are disposed so as topass through the memory cell array CA.

FIG. 4 shows a timing chart for reading data stored in predeterminedmemory cells from the DRAM bank module 10. The address signal ADD andthe control signal CBANK are decoded, thereby an address entered throughthe address signal line ADD from external is decoded by the X decoder,then one word line WD is selected (set to the “HIGH” level) when data isread from the object bank. Of the DRAM memory cells in the memory cellarray CA, the signal is read from the memory cell selected by the wordline WD, then amplified and held by a selected predetermined senseamplifier in the sense amplifier block SA. In addition, the ready signalRDY is set to the “HIGH” level. Of the data read by the selected senseamplifier in the sense amplifier block SA, the data selected by the Ydecoder YD is output to external from the DRAM bank module 10 via theglobal bit line GBL.

Writing of data is also carried out in the same way. The signal enteredfrom a device provided outside a memory bank is transmitted to the senseamplifier block SA via the global bit line GBL, then a word line WDcorresponding to the entered address is driven so that the data iswritten in the object memory cell.

Writing of data into memory cells is also done, just like the readoperation shown in FIG. 4, for the selected sense amplifier in a senseamplifier block SA which hold data read from memory cells activated bythe selection of a word line WD. The write data obtained through theglobal bit line GBL is then transmitted to a selected predeterminedsense amplifier selected by the Y decoder YD, thereby the data iswritten into the corresponding memory cells.

The controller BKCONT controls such a series of the above operationsaccording to the signal received through the control signal line CBANK.

The global bit line GBL for entering/outputting data is disposed at apredetermined place so as to be connected to another DRAM bank module 10and another main amplifier module 13 automatically disposed adjacently.

The power supplying line node PL is disposed at a predetermined place soas to supply an external power to a predetermined circuit in a bank, aswell as to another function modules disposed adjacently to itself. Sincethe global bit line GBL and the power supplying line node PL aredisposed at common places to all the function modules such way, functionmodules can be wired automatically when they are just disposedadjacently to each other. This makes it possible to compose a memorymacro quickly.

Especially, such a standardized disposition of function modules makes itpossible to minimize the chip area for a larger memory capacity, sinceDRAM memory cells are used for the DRAM bank module 10. Especially whenan arithmetic circuit and a memory are integrated on a chip, such theDRAM bank module 10 that uses DRAM memory cells excellent in integralproperties will be most suitable, since an increase of the chip areacannot be avoided in such a case.

<<SRAM Bank Module>>

This SRAM bank module 12 can be composed in the same way as the DRAMbank module 10. In the case of this SRAM bank module 12, however, SRAMmemory cells are used for the memory cell array CA. An SRAM memory cellcomprises four or six transistors. Since each memory cell can be drivenby itself, the sense amplifiers in each sense amplifier block SA isomissible. In addition, since the size of each memory cell differsbetween the DRAM memory module 10 and the SRAM bank module 12, it isdifficult to dispose both of the bank modules 10 and 12 in alignment tothe pitches of the common global bit lines GBL. This problem can beavoided, however, by disposing SRAM memory cells SMC in alignment to thepitches of the global bit lines GBL. FIG. 5 shows an example of such theconnection between the DRAM bank module 10 and the SRAM bank module 12.

In the DRAM bank module 10 shown in FIG. 5 are shown only the memorycell array CA, sense amplifier blocks SA, and Y switches WSW. The memorycell array CA comprises a plurality of word lines WL, a plurality of bitline pairs DL and DLB, and DRAM memory cells DMC disposed at eachintersection point of those word lines and bit line pairs respectively.A sense amplifier block SA is provided for each bit line pair DL andDLB. A global bit line pair GBL and GBLB is disposed for four bit linepairs DL and DLB respectively. In other words, a Y switch YSW makes itpossible to connect one of the four bit line pairs DL and DLBselectively to one global bit line pair GBL and GBLB. Signals from thefour signal lines for controlling such a Y switch YSW are output fromthe Y decoder YD.

In the SRAM bank module 12 shown in FIG. 5 are shown only the memorycell array CA, sense amplifier blocks SA, and Y switches YSW. The memorycell array CA comprises a plurality of word lines WL, a plurality of bitline pairs DL and DLB, and SRAM memory cells SMC disposed at eachintersection point of those word lines and bit line pairs respectively.A sense amplifier block SSA is provided for each bit line pair DL andDLB. Those sense amplifier blocks SSA may be omissible. A global bitline pair GBL and GBLB is disposed for two bit line pairs DL and DLBrespectively. In other words, a Y switch YSW makes it possible toconnect one of the two bit line pairs DL and DLB selectively to oneglobal bit line pair GBL and GBLB. Signals from the two signal lines forcontrolling such a Y switch YSW are output from the Y decoder YD.

As shown in FIG. 5, the number of bit line pairs DL and DLB connected toa global bit line pair GBL and GBLB in the SRAM bank module 12 is lessthan that in the DRAM bank module 10. Thus, this difference of numberbetween the modules 10 and 12 is adjusted so that the SRAM bank module12 that uses larger memory cells can be connected to the global bit linepairs GBL and GBLB at the same pitches as those of the DRAM bank module10.

Although the memory capacity is the same between both bank modules 10and 12, the necessary chip area becomes larger in the SRAM bank module12 than in the DRAM bank module 10. However, the operation of the SRAMbank module 12 is faster than that of the DRAM bank module 10. If thememory capacity of the SRAM bank module 12 is reduced (for example, ifthe capacity is reduced to ¼), the necessary chip area becomes almostthe same as that of the DRAM bank module 10. Consequently, the effectfor using the SRAM bank module 12 will be more apparent when used forcomposing a memory macro if the operation speed of the object memorymacro is considered most important, as well as if the memory macro is tobe used as a cache memory.

<<Cache Bank Module>>

FIG. 6 shows a block diagram of this cache bank module 11. This cachebank module 11 comprises a memory cell array CA, a sense amplifier blockSA, a Y decoder YD, an X decoder AD, a controller BKCONT, a powersupplying line node PL, word lines WD, a global bit line GBL, and ahit/miss judging circuit HM. The configurations of the items in thecache bank module 11 are the same as those of the DRAM bank module 10except for the hit/miss judging circuit HM and the controller BKCONT.

FIG. 7 shows block diagrams of the hit/miss judging circuit HM and thecontroller BKCONT. The hit/miss judging circuit HM comprises a registerREG for holding the last accessed address and a comparator COMP forcomparing a newly entered address with the address held in the registerREG. The controller BKCONT comprises a timing generating circuit TIME,an X-related control circuit XCONT, and a Y-related control circuitYCONT. The control signal CBANKH includes the clock signal CLK, the bandselection signal BS, the read/write selection signal RW, the refreshrequest signal REFS, the refresh interruption signal REFE, the busysignal BSY, etc. The timing generating circuit TIME receives the clocksignal CLK, the band selection signal BS, the read/write selectionsignal RW, the refresh request signal REFS, the busy signal BSY, etc.,thereby generating timing signals necessary for the X-related andY-related control circuits XCONT and YCONT. The timing generatingcircuit TIME also generates the ready signal RDY for notifying anexternal device that data is ready to be read or written and a refreshcycle is ended. The X-related and Y-related control circuits XCONT andYCONT are composed respectively so as to generate control signals XSIGNand YSIGN necessary for internal operations of the cache bank module 11.

Hereunder, the operations of the hit/miss judging circuit HM and thecontroller BKCONTH will be described. The bank selection signal BS isentered to the timing generating circuit TIME. The timing generatingcircuit TIME judges whether or not an object bank is to be selected andsets the control signal HMAC in a predetermined state according to theresult of the judgment. If the bank is judged to be selected, thecontrol signal HMAC activates the comparator COMP. An address ADD isentered to both comparator COMP and register REG. The register REG thenoutputs the last accessed address held in itself to the comparator COMP.If the bank is judged not to be selected, the control signal HMACdeactivates the comparator COMP. Thus, the address ADD is not entered toany of the comparator COMP and the register REG.

The comparator COMP compares a new address with an old address. If thenew and old X addresses match, it is judged to be a hit and the hitsignal HIT is set to the “HIGH” level. If the new and old X and Yaddresses match such way, the hit signal HITC is set to the “HIGH”level. The new address entered to the register REG is thus held until itis confirmed that the next address is entered and compared in thecomparator COMP. The held address is used for the next hit judgment.

The controller BKCONTH executes no normal accesses if the hit signal HITis on the “HIGH” level. Instead, the controller BKCONTH sets the readysignal RDY to “HIGH” and outputs the data held by the sense amplifierblock SA to the object global bit line GBL. At this time, the controllerBKCONTH just selects an address according to the Y address. Then, theY-related control circuit YCONT activates the Y decoder YD, so that thedata held in the sense amplifier block SA is output to the object globalbit line GBL. If the busy signal BSY for indicating that the previousaccess to another memory bank is not ended yet is on the “HIGH” level,the data held in the sense amplifier block SA are not output to theglobal bit line GBL.

The controller BKCONTH executes no ordinary access if the hit signalHITC output from the hit judging circuit HM is on the “HIGH” level.Instead, the controller BKCONTH sets the ready signal RDY to “HIGH” andoutputs the data held by the main amplifier MA to the data input/outputline MAOUT. If the busy signal BSY for indicating that the previousaccess to another memory bank is not ended yet is on the “HIGH” level,the data held in the main amplifier are not output to the datainput/output line MOUT.

If new and old addresses do not match, it is judged to be a miss and thehit signal HIT is set to the “LOW” level. The controller BKCONTH thenaccesses a memory normally. In other words, the last accessed word lineis deactivated and the object bit line is pre-charged. A new word lineis thus activated so that the controller BKCONTH accesses an objectmemory. If data is read by the corresponding sense amplifier block SA,the ready signal RDY is set to “HIGH”.

Hereunder, description will be made for a case in which data stored in apredetermined memory cell is read from the cache bank module 11 asusually (for example, a case in which the first memory access request isissued after the predetermined memory cell is refreshed). If data is tobe read from an object bank just like the DRAM bank module 10 as shownin FIG. 4, an address entered through the address signal line ADD fromexternal is decoded by the address decoder AD, then one of the wordlines WD is selected. After this, the signal in the DRAM memory cellselected by the word line WD in the memory cell array CA is read andamplified, then held by the sense amplifier block SA. At this time, theready signal RDY is set to “HIGH”.

Then, the Y decoder YD selects some of the data held by the senseamplifier block SA and outputs the selected data to a device providedoutside the cache bank module 11 through the global bit line GBL.

On the other hand, writing of data into memory cells is done as follows.The data obtained through a global bit line GBL is transmitted to apredetermined sense amplifier selected by the Y decoder. Before thiswriting, the sense amplifier holds the data read from a memory cellactivated due to the selection of a word line WD.

Next, description will be made for a case in which data is read/writtenfast using the hit/miss judging function (for example, a case in which arefreshed memory is accessed, then a memory access request is issued forthe memory). As shown in FIG. 8, an address entered from externalthrough the address signal line ADD is entered to the X decoder. Theaddress is also entered to the hit/miss judging circuit HM at the sametime. The hit/miss judging circuit HM compares the newly entered addresswith the last entered and held address. If those two addresses match,the hit signal HIT is set to “HIGH”. Thus, it is judged that the objectdata is already read and held by the sense amplifier block SA accordingto the last entered address. The data held by the sense amplifier blockSA is thus output to the global bit line GBL. If those two addressesmatch in such way, the result of the comparison is judged to be a hitand the operation of the X decoder AD is canceled through the controllerBKCONTH, so that no data is read from any of the memory cells.

In the same way, the write operation is executed as follows. If a newlyentered address matches with the last entered and held one, the resultis judged to be a hit, which means that the data corresponding to thepredetermined address is already held by the sense amplifier block SA.Accordingly, the data obtained from a global bit line GBL is transmittedto a predetermined sense amplifier selected by the Y decoder YD withoutreading any data from the memory cell activated due to the selection ofa word line WL.

The controller BKCONTH is also composed so as to set the ready signalRDY to “HIGH” and output the signal notifying the hit to a deviceprovided outside the cache bank module 14. The controller BKCONTHcontrols such a series of operations according to the signal enteredthrough CBANKH.

If the new and old addresses do not match, the result of the comparisonis judged to be a miss and the cache function is disabled. FIG. 9 showsa timing chart for such a case. If an address is entered and thecomparison with the old address is judged to be a miss, the lastaccessed word line is deactivated and the bit line connected to theobject sense amplifier block SA is pre-charged. After this, the wordline corresponding to the new address is activated, then the selectedsense amplifier in the sense amplifier block SA is actuated so as toread data from the predetermined memory cell. If a write operation isjudged to be a miss, the last accessed word line is deactivated once,then data is written in the predetermined memory cell.

If the comparison between new and old addresses is judged to be a hitwhen the cache bank module 14 is provided with a hit/miss judgingcircuit HM such way, part of the read/write operation from/in a memorycan be omitted so as to make accesses faster.

Each global bit line GBL for inputting/outputting data is disposed at apredetermined place so as to be connected to another cache bank module14 and another main amplifier module 13 disposed adjacently to itself.

The power supplying line node PL for supplying an external power to apredetermined circuit in a bank is disposed at a predetermined place soas to able to supply the power to another function modules disposedadjacently to itself. Since the global bit line GBL and the powersupplying line node PL are disposed at their standardized places in eachfunction module such way, those modules can be wired automatically asneeded when they are just disposed adjacently to other modules. Thismakes it possible to compose a memory macro quickly. If a small capacitymemory macro provided with a cache function is to be composed, the cachebank module 11 can be used, thereby reducing the cache controller module16 in size. An, this makes it possible to compose a memory macro at asmaller chip area.

<<Main Amplifier Module>>

FIG. 10 shows a block diagram of this main amplifier module 13. Thismain amplifier module 13 comprises a main amplifier MA, a controllerMACONT for controlling the operation of the main amplifier MA, and apower supplying line node PL. The main amplifier MA comprises a mainamplifier/output circuit MA&BUF and a write amplifier WA. The mainamplifier/output circuit MA&BUF includes a pre-charging circuit forpre-charging a pair of global bit lines GBL to the supply voltage, anequalizing circuit for equalizing the potential of the pair of globalbit lines GBL to the same value, a sense amplifier block SA foramplifying the data of the pair of global bit lines GBL, a latchingcircuit for latching the output of the sense amplifier block SA, and anoutput buffer circuit for outputting data to the data input/output lineMAOUT. The write amplifier WA includes an input buffer circuit (writeamplifier) for receiving data from the data input/output line MAOUT, andother items.

The data entered from a memory bank through a global bit line GBL duringa read operation is amplified by the sense amplifier provided in themain amplifier/output circuit MA&BUF, then latched in the latchingcircuit so as to be output to a device provided outside the memorymacro. When in a write operation, the data entered from a deviceprovided outside the memory macro through the data input/output lineMAOUT is output to the corresponding global bit line GBL through theinput buffer circuit provided in the write amplifier WA.

The controller MACONT controls such a series of operations according tothe control signal CMAM such as the clock signal CLK, the read/writeselection signal RW, the main amplifier control signal MACS, etc.

The main amplifier module 13 interfaces between a global bit line GBLand the input/output line MAOUT connected to a device provided outsidethe memory macro such way. Since the main amplifier module 13 controlsthe object global bit line GBL such way, a memory macro can be composedwith a memory capacity to be varied according to the change of thenumber of memory bank modules.

<<Power Supply Circuit Module>>

FIG. 11 shows a block diagram of this power supply module 14. This powersupply module 14 includes a voltage generating circuit VCHC, a voltagegenerating circuit VHFC, a voltage generating circuit VBBC, etc. Thevoltage generating circuit VCHC generates a voltage VCH (used as theword line voltage necessary for the X decoder AD) higher than thevoltage VCC supplied from a device provided outside the memory macro.The voltage generating circuit VHFC generates a voltage VHF (a ½ voltageof the voltage necessary for the pre-charging circuit provided in thesense amplifier block SA) lower than the voltage VCC supplied from adevice provided outside the memory macro. The voltage generating circuitVBBC generates a voltage VBB (used as the voltage for the substrateprovided in the memory cell array (back-bias voltage)) lower than thevoltage VSS (ground potential) supplied from a device provided outsidethe memory macro. The voltages VCC, VSS, VCH, VHF, and VBB are suppliedfrom the power supplying line node PL to each corresponding module.

If only the SRAM bank module 12 is used, the power supply module 14 doesnot need the voltage generating circuits VBBC, etc., which can thus beomissible from the module 14.

<<Write Data Buffer Module>>

FIG. 12 shows an example of the connection between this write databuffer module 18 and the main amplifier module 13. The write data buffermodule 18 is composed so as to store the same number of write data itemsas the number of memory banks temporarily. For example, the write bufferWB of the write data buffer module 18 comprises a memory array of 4 rowsby 128 columns used for storing four write data items. Each memory cellMC comprises a storing element composed of both inputs and outputs oftwo inverter circuits connected to each other and a CMOS transfer gate(composed of a P-channel MOS transistor and an N-channel MOS transistorconnected to each other in parallel). Each memory cell MC is connectedto a pair of word lines BWL#i(i=0-3) and a data line IO#j(j=0-127). Inorder to minimize the memory cell area, memory cells MC are disposed atthe pitches of the data input/output lines MAOUT of the memory macroMM4.

<<First Example of Memory Macro>>

FIG. 13 shows a block diagram of the memory macro MM1 composed of memorybanks BANK#0, BANK#1, BANK#2, and BANK#3 (comprising a DRAM bank module10 respectively), as well as a main amplifier module 13, a power supplymodule 14, a bank controller module 15, and a write data buffer module18. Function modules are disposed adjacently to those modules, therebythe power supplying line node PL and the global bit line GBL aredisposed at predetermined places common to those modules so as to bewired automatically to each other.

The power supplying line node PLO provided in the power supply module 14receives a power from a device provided outside the memory macro. Apower of each function module (the DRAM bank module 10 and the mainamplifier module 13) is supplied through the power supplying line nodePL after its voltage is raised/fallen by the power supply module 14 asneeded. Data is entered/output through a global bit line GBL disposedautomatically when each DRAM bank module 10 and the main amplifiermodule 13 are disposed.

The memory banks BANK#0, BANK#1, BANK#2, and BANK#3 receive/output datafrom/to the main amplifier module 13 through the global bit line GBL.The main amplifier module 13 receives/outputs data from/to each deviceoutside the memory macro MM1 through the data input/output line MAOUT.Each of the memory banks BANK#0, BANK#1, BANK#2, and BANK#3 is providedwith a controller BKCONT, which controls the operation of itscorresponding memory bank independently of others. The address signalADD and the control signal CBANK are entered to each of those memorybanks. The signal CMAN controls the main amplifier module 13.

FIG. 14 shows a block diagram of the bank controller module 15. Thisbank controller module 15 comprises a buffer memory FIFO, a buffermemory controller FIFOC, a bank decoder BANKDEC, a bank control signalgenerating circuit CBANKGEN#i(i=0-3), a refresh controller REFC, a mainamplifier control signal generating circuit CMAMC, a ready signalcontroller RDYC, etc.

The buffer memory FIFO is provided with a function for buffering theaddress signal ADDIN so as to cope with the address signal ADDIN enteredin each clock cycle. If another memory bank is to be accessed, theaddress signal ADDIN may be entered in each clock cycle. However, if thesame memory bank is accessed continuously or again within three clockcycles, it is impossible to access the memory bank immediately. Thus,the address signal corresponding to a plurality of bus cycles ADDIN andthe read/write selection signal RW are stored temporarily in the buffermemory FIFO.

The buffer memory controller FIFOC is composed so as to control thebuffer memory FIFO.

The bank decoder BANKDEC is composed so as to decide the bankinformation included in the address signal ADDIN, thereby deciding thememory bank to which an access request is issued. After the ready signalRDY#i of the memory bank set to “HIGH” and the end of the accessing isnotified, the bank decorder BANKDEC accesses the same memory bank again.

The bank control signal generating circuit CBANKGEN#i(i=0-3) is composedso as to output the address signal ADD#i(i=0-3) to the objective memorybank, the control signal CBANK (bank selection signal BS#i, RW#i(i=0-3), etc.) and the write data buffer control signal CWDB#i (i=0-3)respectively when the next access is enabled.

The refresh controller REFC is composed so as to output the refreshrequest signal REF#i(i=0-3) to each memory bank. Receiving the refreshrequest signal REF#i (i=0-3), each memory bank generates a refreshaddress in the controller BKCONT, thereby refreshing itself.

Receiving the ready signal RDY#i(i=0-3) from each memory bank, the readysignal controller RDYC generates the ready signal READY#i(i=0-3) for theinternal operation of the controller and the ready signal READY to beoutput to a device provided outside the controller. A memory accessrequesting device such as the CPU, etc. is composed so as not to issue anew memory access request if the device does not receive the readysignal READY within a predetermined period. Consequently, the buffermemory FIFO never overflows.

The main amplifier control signal generating circuit CMAMC is composedso as to generate the main amplifier control signal CMAM.

Hereunder, the internal operation of the memory macro MM1 will bedescribed. At first, an address is entered during a read operation asdescribed with reference to FIG. 2. Then, data is output from theselected memory bank and transmitted to the main amplifier MA through aglobal bit line GBL. The data in the main amplifier MA is output toexternal through the data input/output line MAOUT. On the contrary, whenin a write operation, the data entered through the data input/outputline MAOUT is output to the global bit line GBL through the mainamplifier MA, then transmitted to a predetermined memory bank.Operations such as switching between reading and writing of data from/inthe main amplifier MA are controlled using the control signal CMAM.

Since a memory macro is composed with a method for controlling eachmemory bank separately using the controller BKCONT provided for thememory bank independently and connecting the memory bank to the mainamplifier module 14 through a common data I/O line (global bit lineGBL), it is possible to increase/reduce the number of memory bankseasily, as well as to change the capacity of each memory macro easily.In addition, since the memory macro uses a DRAM bank module 10 that usesDRAM memory cells, a large capacity memory macro can be composed in asmall chip area.

Each of the memory banks BANK#0, BANK#1, BANK#2, and BANK#3 may use anSRAM bank module 12 instead of the DRAM bank module 10. If such an SRAMbank module 12 is used to obtain the same memory capacity, the necessarychip area of the memory macro will be increased more than when the DRAMbank module 10 is used, but the operation speed of the memory macro willbecome faster. Such an SRAM bank module will thus be suitable especiallyfor a memory macro that must operate faster.

FIG. 15 shows a timing chart for reading data sequentially from all thememory banks BANK#0, BANK#1, BANK#2, and BANK#3 in the memory macro MM1.

The address signal ADDIN is fetched by the bank controller 15 at therising edge of the clock signal CLK and used to supply an address to theaddress signal line ADD of each memory (ADD#0, ADD#1, ADD#2, and ADD#3).Receiving the address signal ADD, each of those memory banks outputs theready signal RDY#i for indicating that the bank memory is ready to readdata three clock cycles later. The data read from each memory cell isoutput to the global bit line GBL, then output to the data I/O lineMAOUT at the rising edge of the clock signal CLK. Each arrow mark showsthe correspondence between an address input and a data output to theglobal bit line GBL. All the latency period for reading data is 5 clockcycles.

Since memory banks are accessed sequentially as described above, datacan be read continuously from those memory banks by hiding each accesstime. For example, if addresses are entered repetitively to differentmemory banks within a period between t0 and t3 as shown in FIG. 15, itis possible to read all the data from the memory macro MM1 continuously.If the same memory bank is to be accessed continuously, however, fourclock cycles must be inserted between accesses.

Generally, when a processor (e.g., a central processing unit: CPU) readsa plurality of data items, the addresses of those data items areconsecutive. Thus, in order to read a plurality of data items fast whentheir addresses are consecutive such way, the addresses of the memorymacro MM1 should be assigned so that banks are accessed sequentially ifconsecutive addresses are entered continuously.

FIG. 16 shows an example for mapping the addresses of the memory macroMM1 so as to access consecutive data items continuously therein. Arrowmarks indicate the correspondence between the address space shown on theleft side and the four memory banks BANK#0, BANK#0, BANK#2, and BANK#3shown on the right side in FIG. 16. The DRAM bank module 10 in this caseis assumed to have a capacity of 256K bits, so the total capacity of thememory macro MM1 becomes 1M bits.

The addresses necessary for this memory macro MM1 are as follows. Atfirst, 2 bits are necessary for selecting each of the four banks. Then,if the number of sense amplifiers provided in a memory bank is 1024 andthe number of the global bit lines GBL is 128, the necessary addressspace will become 1024/128=8 ways, which means 3 bits when each senseamplifier to be connected to a global bit line is to be selected. Inaddition, the number of memory cells provided in a memory bank is256×1024 and if the number of memory cells is divided by the number ofsense amplifiers 1024, the result will become 256. Thus, the number ofword lines is 256. An address space for selecting one of those 256 wordlines is thus 8 bits. The total of those addresses is thus 13 bits.Since the selection of a word line WD to which 8-bit address space isassigned also includes pre-charging of a bit line, the operation of asense amplifier block SA, the activation of a word line WD, etc., thetime will become longer than that of other operations. This is why theaddresses of the memory macro may be mapped so as to select a word lineWD in another memory bank without selecting the currently accessedmemory bank in order to access the addresses faster in ordercontinuously if selection is made for a word line WD that needs muchtime for changing addresses. FIG. 16 shows an example for mapping theaddresses of a memory macro such way. Of the thirteen digits of anaddress in total, eight digits for selecting a word line WD are assignedto the upper bits and three digits for selecting the Y decoder YD areassigned to the intermediate bits, and two digits for selecting a memorybank are assigned to the lower bits respectively.

For example, the data corresponding to the address 0,000,000,000,000 isread from the memory bank BANK#0. The next address 0,000,000,000,001indicates the data tobe read from the memory bank BANK#1, which followsthe memory bank BANK#0. Addresses are assigned sequentially such way sothat the data in the address 0,000,000,000,100 is read from the memorybank BANK#0.

If the memory macro MM1 whose addresses are mapped such way is accessedin ascending order of address, then another memory bank, which isdifferent from the currently accessed one, is accessed when a new wordline is activated. Thus, the apparent preparing time including thepre-charging of the object can be hidden, enabling continuous datareading. In the memory macro MM1 whose addresses are mapped as shown inFIG. 16, therefore, if consecutive addresses are entered in order, allthe bits will be read easily from the memory macro MM1.

The write operation is also done just like the read operation describedabove. The address signal ADDIN can be entered in every clock cycle.Consequently, write data is also transmitted to the memory macro MM1 inevery clock cycle. However, write data cannot always be written into anobject memory bank immediately at this time. This is why write data isstored in the write data buffer WDB temporarily. Write data is read fromthe write data buffer WDB and written into a memory bank when the memorybank is ready to receive data. This write operation is controlledaccording to the write buffer control signal CWDB#i. In other words, oneof the word lines BWL of the write buffer WB is selected, then writedata is written into the word line. After this, when the subject memorybank is ready to receive data, a word line BWL is selected again and thewrite data is output to the data line 10. Then, the write amplifierenable signal WAE is activated and the write data output to the dataline 10 is output to the global bit line GBL by the write amplifierprovided in the main amplifier MA#i.

<<Second Example of Memory Macro>>

If an SRAM bank-module 12 is used as each memory bank in the memorymacro MM1, the operation of the memory macro will become faster. FIG. 17shows a timing chart for reading data from a memory macro composed offour SRAM bank modules 12. Since only one clock cycle is needed for thelatency in this case, data can be read faster than when DRAM bankmodules 10 are used as memory banks.

The memory macro MM2 may also be composed of four DRAM bank modules 10and two SRAM bank modules 12 as shown in FIG. 1. In this case, theoperation of the memory macro MM2 will become faster than that of amemory macro, which uses six DRAM bank modules 10. In addition, thenecessary chip area of the memory macro MM2 can be reduced more thanthat of a memory macro which uses six SRAM bank modules 12.

If a memory bank is composed of a combination of memory banks, each ofwhich can be controlled independently, it would be very easy to composememory macros provided with functions and performances different fromeach other as described above. If such various memory banks areprepared, each object memory macro will be enhanced more in function.

<<Third Example of Memory Macro>>

FIG. 18 shows a block diagram of the memory macro MM3 provided with acache function. The memory macro MM3 comprises four memory banksBANKC#0, BANKC#1, BANKC#2, and BANKC#3, each of which is a cache bankmodule 11. The memory macro MM3 also includes a main amplifier module13, a power supply module 14, a cache controller module 16, and a writedata buffer module 18.

The cache function of the memory macro MM3 can hold the data read from amemory cell activated by a word line activated once in a sense amplifiertemporarily so that the data held in the sense amplifier is outputwithout activating the same word line again if the next accessed data ison the word line used for the last accessed data.

FIG. 19 shows a block diagram of the cache controller module 16. Thecache controller module 16 comprises a buffer memory FIFOCA, a buffermemory controller FIFOCN, a bank decoder BANKDECC, a bank control signalgenerating circuit CBANKGEC#i(i=0-3), a refresh controller REFCC, a mainamplifier control signal generating circuit CMAMCC, a ready signalcontroller RDYCC, etc.

The buffer memory FIFOCA is provided with a function for buffering theaddress signal ADDIN so as to cope with the input of the address signalADDIN in every clock cycle. When accessing a memory bank to be hit, theaddress signal ADDIN may be entered in every clock cycle. However, whenaccessing a memory bank not to be hit, it is impossible to access thememory bank immediately. Therefore, the buffer memory FIFO stores theaddress signal ADDIN and the read/write selection signal RW temporarily.The addresses ADDIN and RW correspond to a plurality of bus cycles.

The buffer memory controller FIFOC is composed so as to control thebuffer memory FIFOCA.

The bank decoder BANKDECC is composed so as to decode the bankinformation included in the address signal ADDIN and decide a memorybank to which an access request is issued.

The bank control signal generating circuit CBANKGEC#i (i=0-3) iscomposed so as to output the address signal ADD#i(i=0-3) issued to amemory bank to which an access request is issued, as well as the controlsignal CBANKH (bank selection signal BS#i, the RW#i(i=0-3),BSY#i(i=0-3), etc.) and the write data buffer control signalCWDB#i(i=0-3).

The refresh controller REFCC is composed so as to output the refreshrequest signal REFS#i(i=0-3) and the refresh interruption signalREFE#i(i=0-3) to each memory bank. Receiving the refresh request signalREFS#i (i=0-3), the subject memory bank generates a refresh address inthe controller BKCONTH, thereby refreshing itself. Receiving the refreshinterruption signal REFE#i(i=0-3), the subject memory bank stops therefreshing. If the refreshing is ended or paused, the controller BKCONTHoutputs the ready signal RDY#i (i=0-3).

The ready signal controller RDYCC, when receiving the ready signal RDY#i(i=0-3) from a memory bank, generates the ready signal READY#i(i=0-3) tobe used for the internal operation of the controller and the readysignal READY to be output to a device outside the controller. If theready signal READY is not entered within a predetermined period, thesubject memory access requesting device such as the CPU, etc. isprevented from issuing any more memory access. Consequently, the buffermemory FIFOCA never overflows.

The main amplifier control signal generating circuit CMAMCC generatesthe main amplifier control signal CMAM.

Next, the operation of the memory macro MM3 will be described. FIG. 20shows a timing chart for the operation of the memory macro MM3. If anaddress is entered to the cache controller module 16 through the addresssignal line ADDIN, the cache controller module 16 accesses the memorybank corresponding to the address. In the addressed memory bank, thehit/miss judging circuit HM judges whether or not the address matcheswith the last accessed address. If the addresses match, it is judgedthat the object data is already read and held in the sense amplifierblock SA according to the old address. The result of the judgment isthus notified to the cache controller module 16 through the ready signalline RDY#i. The cache controller module 16 then outputs the ready signalRDY#i to the object external device as the ready signal READY.

The data held in the sense amplifier block SA is thus selected by the Ydecoder and output from the MAOUT through the global bit line GBL andthe main amplifier MA. However, this data output from the MAOUT throughthe global bit line GBL and the main amplifier MA is suspended until themain amplifier is notified of the busy signal BSY#i set to “LOW” and theend of the previous access to another memory bank.

If the cache is hit such way (if the same page is accessed again), it ispossible to omit both pre-charging of the data line and activation ofthe word line, etc., thereby making the operation faster than normalaccessings. In addition, since part of the operation is omitted suchway, the power consumption can also be suppressed.

Since two clock cycles can be used for the latency to output data if acache is hit such way, it is possible to operate the DRAM memory macrofaster, although its chip area is small.

If the addresses do not match, the memory is accessed normally after theword line is deactivated and the dateline is pre-charged.

As described in the first memory macro example, if a processor (e.g.,CPU) reads a plurality of data items, generally the addresses of thosedata items are often consecutive. In order to read the data from suchconsecutive addresses faster, therefore, addresses of the memory macroMM3 should be assigned so that those addresses are accessed in order ofmemory bank when consecutive addresses are entered.

FIG. 21 shows an example for mapping the addresses of the memory macroMM3 so that data can be accessed continuously in the memory macro MM3.Arrow marks indicate the correspondence between the address space shownon the left side and the four memory banks BANK#0, BANK#1, BANK#2, andBANK#3 shown on the right side in FIG. 21. The DRAM bank module 10 inthis case is assumed to have a capacity of 256K bits, so the totalcapacity of the memory macro MM3 becomes 1M bits.

The addresses necessary for this memory macro MM3 are as follows. Atfirst, 2 bits are necessary for selecting each of the four banks. Then,if the number of sense amplifiers provided in a memory bank is 1024 andthe number of the global bit lines GBL is 128, the necessary addressspace will become 1024/128=8 ways, which means 3 bits if each senseamplifier to be connected to a global bit line is selected. In addition,the number of memory cells provided in a memory bank is 256×1024 and ifthe number of memory banks is divided by the number of sense amplifiers1024, the result is 256. Thus, the number of word lines will become 256.An address space for selecting one of those 256 word lines is thus 8bits. The total of those addresses is thus 13 bits. Since the selectionof a word line WD to which 8-bit address space is assigned also includespre-charging of a bit line, the operation of a sense amplifier block SA,the activation of a word line WD, etc., the time will become longer thanthat of other operations. This is why the addresses of the memory macromay be mapped so as to select a word line WD in another memory bankwithout selecting the currently accessed memory bank in order to accessthe addresses faster in order continuously if selection is made for aword line WD that needs much time for changing addresses.

FIG. 21 shows an example for mapping the addresses of a memory macrosuch way. Of the thirteen digits of an address in total, eight digitsfor selecting a word line WD are assigned to the upper bits and twodigits for selecting a memory bank are assigned to the intermediatebits, and three digits for the selection by the Y decoder YD areassigned to the lower bits respectively.

For example, the data existing between addresses 0,000,000,000,000 and0,000,000,000,111 is read from the memory bank BANK#0 through a wordline WD. The lower three bits are used to indicate the selection by theY decoder YD. The lower fourth and fifth bits are used to select a bank.The data existing between the next addresses 0,000,000,001,000 and0,000,000,001,111 exist on a word line WD in the next memory bank BANK#1which follows the memory bank BANK#0. Addresses are assigned cyclicallysuch way, so that the data existing between the addresses0,000,000,100,000 and 0,000,000,100,111 become again data on the wordline WD of the memory bank BANK#0.

If the memory macro MM3 whose addresses are mapped such way is accessedin order of address, then another memory bank, which is different fromthe currently accessed one, is accessed when a new word line isactivated. Thus, the apparent preparing time including the pre-chargingof the object item can be hidden, thereby it is possible to read datacontinuously. In the memory macro MM3 whose addresses are mapped asshown in FIG. 16, therefore, if consecutive addresses are enteredsequentially, all the bits can be read easily from the memory macro MM3.According to this method, the data in the memory cells activated by aword line activated once is read completely. It is thus possible tominimize the power consumption required for reading data fromconsecutive addresses.

The write operation is also done just like the read operation describedabove. The address signal ADDIN can be entered in every clock cycle.Consequently, write data is also transmitted to the memory macro MM3 inevery clock cycle. In this case, however, write data cannot always bewritten into each memory bank immediately. This is why write data isstored in the write data buffer WDB temporarily. The write data is readfrom the write data buffer WDB and written into a memory bank when thememory bank is ready to receive data. This write operation is controlledaccording to the write buffer control signal CWDB#i. In other words, oneof the word lines BWL of the write buffer WB is selected and write datais output to the word line. After this, when the subject memory bank isready to receive data, a word line BWL is selected again and the writedata is output to the data line 10. Then, the write amplifier enablesignal WAE is activated and the write data output to the data line 10 isthen output to the global bit line GBL by the write amplifier providedin the main amplifier MA#i.

Since a cache hit miss (page hit miss) has occurred for the addressentered in the period t4 shown in FIG. 20 and the memory bank BANK#0 isaccessed normally after the word line is deactivated once, then the dataline is pre-charged, the latency value is increased to seven clockcycles. If a hit miss occurs while a sense amplifier block SA is used asa cache such way, therefore, the memory is accessed normally after theword line is activated and the data line is pre-charged. Thus, such theoperation comes to be confronted with a problem that the access timebecomes longer than a case in which data is read normally without usingthe cache function.

In addition, the memory banks corresponding to the addresses entered inthe periods t5, t6, and t7 are hit respectively as shown in FIG. 20 andthe cache function can be used to output data faster. In spite of this,since the cache function is disabled for the address entered in theperiod t4, the operation of the CPU for the data outputtingcorresponding to the addresses entered in and after the period t5 islimited dominantly, thereby the cache function is not used effectively.In this example, a cache hit miss disables the output of subsequentdata, but the refresh operation of DRAM memory cells will also cause acongestion of data output sometimes.

FIG. 22 shows various latency values of the memory macro MM3. Thelatency values shown in FIG. 22 are assumed between when the addresssignal ADDIN is entered and when data is output to the data I/O lineMAOUT. If the data held in the main amplifier MA is hit, the data isoutput at a latency value 1 as shown with “Main”. If the data held inthe sense amplifier block SA is hit, the data is output at a latencyvalue 2 as shown with “Sense”. If a memory bank is accessed normally,the data is output at a latency value 5 as shown with “Ordinary”. If amiss occurs, the data is output at a latency value 7 as shown with“Mishit”. If the subject DRAM is in a refresh cycle, the latency forreading data after the refreshment is ended takes various values asshown with “Ref.E”.

If it is impossible to read data until the end of the refreshment of amemory macro comprising DRAM memory banks in a system enhanced forfaster operations with the cache function, the system performance willbe degraded significantly. To avoid such the problem, therefore, therefreshment of the memory macro may be started earlier. If a memoryaccess request is issued during such a refreshment, the refreshment maybe stopped once, then restarted after the memory access request isprocessed. The latency for outputting data while the refreshment isstopped once such way will take a value as shown with “Ref.C” in FIG.22. If a memory macro is composed of DRAM memory banks and provided withthe cache function as described above, the memory macro must correspondto various latency values.

In addition, if a memory bank is accessed at various latency values,data output will often be suspended depending on the address inputorder. For example, if an address that hits a sense amplifier cache inanother memory bank is entered just after an address entry to a memorybank that being refreshed, the data read from the cache of the senseamplifier block SA can usually be output earlier, but the data outputmust be suspended until the output of the data read according to theaddress entered earlier is ended.

<<Fourth Example of Memory Macro>>

FIG. 23 shows a block diagram of this memory macro MM4 that outputsaddress and data ID signals. This memory macro MM4 is provided with anaccess sequence controller module with ID 17 instead of the cachecontroller module 16 provided for the memory macro MM3. The accesssequence controller module with ID 17 outputs two ID signals as addressID signal AID and data ID signal DID, thereby outputting the datacorresponding to a later-entered address earlier if it is enabledregardless of the address input order. This makes it possible to accessmemory banks faster.

Hereunder, the operation of such the memory macro MM4 will be describedbriefly. If an address is entered through the address signal line ADDIN,the access sequence controller module with ID 17 is instructed to decidean ID number corresponding to the entered address and outputs the IDnumber as the address ID signal AID. The output ID number is held by thememory accessed processor until the data arrives. On the other hand, theaccess sequence controller module with ID 17 accesses the memory bankcorresponding to the entered address, outputs the read data, and outputsthe ID number assigned at the address inputting as the data ID signalDID. Receiving both data and ID number, the processor compares the IDnumber received from the access sequence controller module with ID 17when in accessing of the memory bank with the ID number receivedtogether with the data. If both ID numbers match, the processor makesthe address and the data be corresponded to each other. Since an addresscan be corresponded to data via an ID number such way, it is no need tomatch the order of address input with the order of data output when inaccessing of a memory bank, although it is indispensable in the priorart. As described above, even when memory accesses are done continuouslyat different latency values, which becomes a problem for composing amemory macro comprising DRAM memory banks and provided with the cachefunction, first-prepared data can be output first regardless of theorder of address input, and data assigned to a larger latency value canbe output later, since address and data can be corresponded through anID number respectively. Consequently, memory banks can be accessed moreeffectively with such the correspondence between address and datathrough each ID number.

FIG. 24 shows a block diagram of the access sequence controller modulewith ID 17. The access sequence controller module with ID 17 comprises alatching circuit LTCH, a bank decoding circuit BNKDEC, a bank controlsignal generating circuit CBNKG*i(i=0-3), a refresh controller RFRSHC, amain amplifier control signal generating circuit CMMC, an ID signalcontroller IDCNT, etc.

The latching circuit LTCH fetches both address signal ADDIN andread/write selection signal RW at the rising edge of the clock signalCLK respectively.

The bank decoding circuit BNKDEC decodes the bank information includedin the address signal ADDIN, thereby deciding the memory bank to whichan access request is issued.

The bank control signal generating circuit CBNKG#i(i=0-3) outputs theaddress signal ADD#i(i=0-3) indicating the memory bank to which anaccess request is issued, as well as the control signal CBANKH (bankselection signal BS#i, RW#i(i=0-3), BSY#i(i=0-3), etc.), the bankrequest signal BR#i(i=0-3), and the write data buffer control signalCWDB#i(i=0-3). The bank request signal BR#i(i=0-3) is outputunconditionally when a memory access request is issued, but the bankselection signal BS#i (i=0-3) is not output until accessing of an objectmemory bank is enabled.

The refresh controller RFRSHC outputs the refresh request signalREFS#i(i=0-3) and the refresh interruption signal REFE#i(i=0-3) to eachmemory bank. Receiving the refresh request signal REFS*i(i=0-3), thesubject memory bank generates a refresh address in the controllerBKCONTH, thereby refreshing itself. If the refresh interruption signalREFE#i(i=0-3) is entered during a refresh operation, the refreshing ispaused.

The ID signal controller IDCONT generates both address ID signal AID anddata ID signal DID from the bank request signal BR#i(i=0-3) and theready signal RDY#i(i=0-3). Since data can be entered/output in order ofentered address in/from the same memory bank, the memory bank number andthe ID number can be corresponded to each other. Consequently, it ispossible to judge which of the memory banks is accessed according to thebank request signal BR#i(i=0-3). It is thus possible to generate theaddress ID signal AID from the bank request signal BR#i(i=0-3). Inaddition, it is possible to judge which of the memory banks is readyaccording to the ready signal RDY#i(i=0-3) indicating that the subjectmemory bank is ready to output/receive data. It is thus possible togenerate the data ID signal DID from the ready signal RDY#i(i=0-3).

The main amplifier control signal generating circuit CMMC generates themain amplifier control signal CMAM.

FIG. 25 shows a timing chart for the operation of the memory macro MM4that outputs both data and ID number as described above. At first, fouraddresses a, b, c, and d (different bank addresses) are enteredconsecutively to the address signal line ADDIN, then four ID numbers,each corresponding to an entered address, are output as address IDsignals AID. Those ID numbers are also output as the data ID signal DIDwhen a read operation is ended and the data is output.

For example, an ID number 1 is assigned to the address a enteredfirstly. If the address a corresponds to a memory bank being refreshed,however, data A is output together with the data ID signal DID in theperiod t12. The address b to which an ID number 2 is assignedcorresponds to the data already held in the sense amplifier block SA.The data is thus output at the latency value 2. The address ccorresponds to the data output by pausing the refreshing temporarily andthe address d corresponds to the data existing in the main amplifier MAand to be output from there.

Since this example takes the correspondence between address and datausing an ID number respectively such way, it is no need to match theorder of address input with the order of data output. This example thusmakes it possible to output first-prepared data first, thereby allowingmemory banks to be accessed faster.

In addition, the address input timing and the data output timing will beoverlapped depending on the address input timing. In such a case, it isconsidered that the data corresponding to the address entered first isin a higher emergency, so the data is output first. The busy signalBSY#i(i=0-3) is used to control this operation.

For example, the operation is a memory access in which the data isoutput at a latency value of 7 as shown with “Mishit” in FIG. 22. Thedata corresponding to the address e is output in the period t11.However, the period t12 in which the data corresponding to the address fshould be output is t12, but the data output is overlapped with the dataoutput corresponding to the address a. Consequently, since priority isgiven to the data corresponding to the address a, which is enteredfirst, the latency value for the data output corresponding to theaddress f is increased by one. The data is thus output in the periodt13.

FIG. 26 shows the internal operation of each memory bank. In order tosimplify the description, FIG. 26 shows the operations of only twomemory banks. At first, two addresses a and b are entered, so that twomemory banks BANK#0 and BANK#1 are accessed. Since a cache hit missoccurs in the memory bank BANK#0, the word line WD is deactivated once.The word line WD is activated again after the corresponding senseamplifier is pre-charged. Then, the sense amplifier is actuated.

In the memory bank BANK#1, the cache is hit. So, the signal HIT#1 isoutput and the data B is output immediately to the global bit line GBL.After this, the operation of the sense amplifier in the memory bankBANK#0 is completed and the data A is read and output to the global bitline GBL.

The write operation is also done just like the above read operation. Theaddress signal ADDIN can be entered in every clock cycle. Consequently,write data is transmitted to the memory macro MM4 in every clock cycle.However, the write data cannot always be written into each memory bankimmediately. To avoid such a problem, therefore, the write data isstored in the write data buffer WDB temporarily. The write data is thenread from the write data buffer WDB and output to the object memory bankwhen the memory bank is ready to receive data. The write buffer controlsignal CWDB#i is used to control the operation. In other words, one ofthe word lines BWL of the write buffer WB is selected and the write datais written into the word line. After this, when the subject memory bankis ready to receive data, the word line BWL is selected again and thewrite data is output to the data line 10. Then, the write amplifierenable signal WAE is activated and the write data output to the dataline 10 is output to the global bit line GBL by the write amplifierprovided in the main amplifier MA#i. At this time, the data ID signalDID is also output.

<<Another Configuration of Access Sequence Controller Module with ID>>

FIG. 27 shows another block diagram of the access sequence controllermodule 17 with ID. This controller 17 comprises an addresssubmission/total control unit 17A, an ID controller 17B, and a commandsubmission part 17C. The address submission/total control unit 17A, whenreceiving the address signal ADDIN, instructs the ID controller 17B tooutput the address ID signal AID. The ID controller 17B references to atable (to be described later), thereby outputting an address ID as theaddress ID signal AID. In addition, the address submission/total controlunit 17A requests the command submission part 17C to issue a command toa memory bank corresponding to the entered address. The commandsubmission part 17C, which manages the state of each memory bank, issuesinstruct a timing for issuing the inputted address to the addresssubmission/total control part 17A and simultaneously outputs a command.The command submission part 17C also outputs the control signal CMAM toinstruct the ID controller 17B to output a data ID so as to operate themain amplifier MA by deciding the order for outputting data from eachmemory bank. The ID control unit 17B references to a table thereby tooutput an address ID as the data ID signal DID. The address ID is issuedfor the address of the object data.

FIGS. 28 and 29 show control flowcharts of the ID control unit 17B. Atable MM-TABLE is used to hold the information (Valid: hereafter, to bereferred to as an effective flag VALID) indicating that the ID number.(ID No.), the address value (ADD), and the correspondence between themare all valid. Data is written/referenced into/to this table MM-TABLE. Atable management state machine TMSM controls those write and referenceoperations. FIGS. 28 and 29 show diagrammatic views of the informationflow among the central information unit (CPU), the memory bank BANKC#i,and the table MM-TABLE.

FIG. 28 shows a flowchart for issuing the address ID signal AID when theaddress signal ADD is entered. The address signal ADDIN (hereafter, tobe represented as the address signal ADD) entered from the centralprocessing unit (CPU) is output as the address signal ADD to the objectmemory bank BANKC#i. An ID number corresponding to the address signalADD is thus decided. This ID number is returned as the address ID signalAID to the CPU. Hereafter, the operation flow shown in FIG. 28 willbecome as follows in a concrete example.

(1) The CPU transmits the address signal ADD(ADD=6) to the addresssubmission/total control unit 17A.

(2) The address submission/total control unit 17A outputs the addresssignal ADD(ADD=6) to the object memory bank BANKC#i.

(3) The address submission/total control unit 17A transmits the addresssignal ADD(ADD=6) to the table MM-TABLE.

(4) The address signal ADD(ADD=6) is written into a place of the tableMM-TABLE, corresponding to the ID number(ID=#4), thereby the valid flagVALID is validated (“Yes” is shown in FIG. 28).

(5) The address ID signal AID(AID=#4) assigned from the table MM-TABLEis read.

(6) The assigned address ID signal AID(AID=#4) is returned to the CPU.

The CPU holds the value of the address ID signal AID (AID=#4) so as toknow the correspondence between address and data by detecting matchingof the value of the AID with the data ID signal DID added when objectdata is output.

FIG. 29 shows a flowchart for issuing the data ID signal DID when datais output. A signal indicating the data output from the memory bankBANKC#i is entered, then the address signal ADD with which the memorybank has been accessed is decoded. The ID number corresponding to theaddress signal ADD is checked. This ID number is returned to the CPU asthe data ID signal DID. Hereafter, the operation flow shown in FIG. 29will become as follows in. a concrete example.

(1) The ready signal RDY#i is returned from the memory bank BANKC#i thatoutputs data to the command submission part 17C, thereby the addresssignal ADD (ADD=6) is obtained from the address latching circuit ADDLT#ithat latches an access address in the address submission/total controlunit 17A.

(2) The address signal ADD(ADD=6) is entered to the table MM-TABLE.

(3) The ID number corresponding to the address signal ADD(ADD=6) issearched in the table MM-TABLE.

(4) The data ID signal DID(DID=#4) is read from the table MM-TABLE.

(5) The data ID signal DID(DID=#4) is output to the CPU.

Receiving data and the data ID signal DID(DID=#4), the CPU can know thatthis data corresponds to the address signal ADDIN(ADDIN=6) from thevalue of the address ID signal AID(AID=#4) received previously.

The contents in the table MM-TABLE shown in FIG. 28 differ from thecontents in the table MM-TABLE shown in FIG. 29. In the table MM-TABLEshown in FIG. 29, the valid flag VALID corresponding to ID No.#2 isinvalidated (“No” is shown in FIG. 29) and the address space ADD is thusblank. This indicates that the data corresponding to the address value 2is already read out and #2 is transmitted to the CPU as the value of thedata ID signal DID. If the valid flag VALID is invalidated, a newaddress can be entered. In the table MM-TABLE shown in FIG. 29, thevalid flag VALID corresponding to ID No.#5 is validated and 1 is writtenin the address ADD. The difference between the above two cases indicatesthat the data corresponding to the value 0 of the address ADD is readout between when 6 is entered to an object memory macro as the value ofthe address ADD and when the data is output, then 1 is entered as thevalue of the address ADD.

FIG. 30 shows a block diagram of the table MM-TABLE. The table MM-TABLEcomprises an associative memory CAM, etc. For example, if the controlsignal AW is set to the “HIGH” level, an association stopping circuitAINH stops association and an association memory word line selectioncircuit WSEL is actuated, thereby a word line for which the valid flagis invalidated is selected. In this state, the address ADD is entered tothe associative memory CAM and held in it. If an ID number iscorresponded to the word line of the associative memory CAM beforehand,the selected word line is encoded by the encoding circuit ENDER, therebythe address ID signal AID is obtained. If the control signal AW is setto the “LOW level, the association stopping circuit AINH startsassociation, thereby the operation of the association memory word lineselection circuit WSEL stops. If the address ADD is entered to theassociative memory CAM in this state, an association operation isstarted and the matching line of the row storing the correspondingaddress is set to the “HIGH” level. If an ID number is corresponded tothe matching line of the associative memory CAM beforehand, the selectedmatching line is encoded by the encoding circuit ENDER, thereby the dataID signal DID is obtained. In addition, if the valid flag VALID is reseton the matching line of the associative memory CAM, the ID numbercorresponding to the access-ended address can be invalidated.

The ID number can be used such way to change the order of both addressinput and data output to/from a memory macro. Consequently, the dataprepared first can be output first, thereby it is possible to compose amemory macro provided with a very effective cache function easily.

<<Application to a Multiprocessor System>>

The method that uses ID numbers as described above can also apply to amultiprocessor system. FIG. 31 shows a block diagram of such amultiprocessor system. In this example, two processors (CPU#1 and CPU#2)share one memory macro MM. This multiprocessor also includes an addressbus ABUS, a data bus DBUS, an address ID signal line, a data ID signalline DID, and a processor ID signal line PID that indicates a processornumber. Each processor outputs the processor ID signal PID, whichnotifies the memory macro MM of which of the processors has issued anaddress when the address is issued. The memory macro MM manages thevalue of the processor ID signal PID together with the address value, sothat the processor ID signal PID is output again when data is output,thereby identifying the object processor to which the data is to betransmitted.

FIG. 32 shows a flowchart for issuing the address ID signal AID and theprocessor ID signal PID from the memory macro MM when an address isentered. This flowchart is the same as that shown in FIG. 28 except forthe management of the processor ID signal PID added to the table thistime. Hereafter, the operation flow shown in FIG. 32 will become asfollows in a concrete example.

(1) Both address signal ADD (ADD=6) and processor ID signal PID(PID=0)are entered to the address submission/total control unit 17A from theCPU.

(2) The address submission/total control unit 17A outputs the addresssignal ADD(ADD=6) to the object memory bank BANKC#i.

(3) The address submission/total control unit 17A enters both addresssignal ADD(ADD=6) and processor ID signal PID(PID=0) to the tableM-TABLE.

(4) Both address signal ADD (ADD=6) and processor ID signal PID(PID=0)are written into places in the table M-TABLE, corresponding to the IDnumber (ID=#4), then the valid flag VALID is validated (“Yes” is shownin FIG. 32).

(5) The address ID signal AID(AID=#4) assigned from the table M-TABLE isread out.

(6) Both read-out address ID signal AID(AID=#4) and processor ID signalPID(PID=0) are returned to the CPU.

FIG. 33 shows a flowchart for issuing both data ID signal DID andprocessor ID signal PID when data is output. This flowchart is the sameas that shown in FIG. 29 except for the management of the processor IDsignal PID added to the table this time. Hereafter, the above operationflow shown in FIG. 33 will become as follows in a concrete example.

(1) The ready signal RDY#i is returned from the memory bank BANKC#i thatoutputs data to the command submission part 17C, thereby the addresssignal ADD (ADD=6) is obtained from the address latching circuit ADDLT#iused to latch an access address in the address submission/total controlunit 17A.

(2) The address signal ADD(ADD=6) is entered to the table M-TABLE.

(3) The ID number (ID=#4) corresponding to the address signal ADD(ADD=6) and the processor ID signal PID(PID=O) are searched in the tableM-TABLE.

(4) The data ID signal DID(DID=#4) and the processor IS signalPID(PID=0) are read out from the table M-TABLE.

(5) The data ID signal DID(DID=#4) and the processor IS signalPID(PID=0) are output to the CPU.

FIG. 39 shows a block diagram of the table M-TABLE. The table M-TABLEcomprises an associative memory CAMM, a random access memory RAMM, etc.For example, if the control signal AW is set to the “HIGH” level, theassociation stopping circuit AINH stops association and the associationmemory word line selection circuit WSEL is actuated, thereby a word linefor which the valid flag is invalidated is selected. The control signalAW allows the matching line/word line selection circuit WMSEL of theassociative memory CAMM to select a word line and connect the word lineto the word line of the random access memory RAMM. The address signalADD is entered to the associative memory CAMM and stored there in thisstate. The processor ID signal PID is entered to the random accessmemory RAMM and stored there. If an ID number is corresponded to theword line of the associative memory CAMM beforehand, the selected wordline can be encoded by the encoding circuit ENDER, thereby obtaining theaddress ID signal AID. If the control signal AW is set to the “LOW”level, the association stopping circuit starts association and theassociative memory word line selection circuit WSEL stops its operation.The control signal AW allows the matching line/word line selectioncircuit WMSEL of the associative memory CAMM to select a matching lineand connects the matching line to the word line of the random accessmemory RAMM. If the address signal ADD is entered to the associativememory in this state, an association operation is started and thematching line of the row storing the object address is set to the “HIGH”level. Consequently, the processor ID(PID) is read from the randomaccess memory RAMM. If an ID number is corresponded to the matching lineof the associative memory CAMM beforehand, the selected matching linecan be encoded by the encoding circuit ENDER, thereby obtaining the dataID signal DID. If the valid flag VALID is reset on the matching line ofthe associative memory CAMM, the ID number corresponding to theaccess-ended address can be invalidated.

FIGS. 35 and 36 shows flowcharts for managing ID numbers in a processor.FIG. 35 shows a flowchart for reading the address ID signal AID. The CPUis also provided with a table CPU-TABLE that describes thecorrespondence between ID numbers and addresses just like the memorymacro MM. The table management state machine CSMC references to thetable CPU-TABLE thereby to indicate the correspondence between an IDnumber and an address. Hereafter, the operation flow shown in FIG. 35will become as follows in a concrete example.

(1) Both address ID signal AID(AID=#4) and processor ID signalPID(PID=0) are entered from the memory macro MM.

(2) If the processor ID signal PID(PID=0) indicates the ID of its ownprocessor, the address signal ADD (ADD=6) and the address ID signalAID(AID=#4) are entered to the table CPU-TABLE.

(3) The address signal ADD (ADD=6) and the address ID signal AID(AID=#4) are written into places in the table CPU-TABLE, correspondingto the ID number(ID=#4), thereby the valid flag VALID is validated(“Yes” is shown in FIG. 35).

FIG. 36 shows a flowchart for reading the data ID signal DID. Hereafter,the operation flow shown in FIG. 36 will become as follows in a concreteexample.

(1) Both data ID signal DID(DID=#4) and processor ID signal PID(PID=0)are entered to the memory macro MM.

(2) If the processor ID signal PID(PID=0) indicates the ID of its ownprocessor, the data ID signal DID(DID=#4) is entered to the tableCPU-TABLE.

(3) The address signal ADD (ADD=6) corresponding to the data ID signalDIF(DID=#4) is searched in the table CPU-TABLE.

(4) The address signal ADD(ADD=6) is read from the table CPU-TABLE.

(5) The address signal ADD(ADD=6) is output.

FIG. 37 shows a block diagram of the table CPU-TABLE. The tableCPU-TABLE comprises an associative memory CAMC, a random access memoryRAMC, etc. For example, if the control signal AW is set to the “HIGH”level, the association stopping circuit AINH stops association and theassociation memory word line selection circuit WSEL is actuated, therebya word line for which the valid flag is invalidated is selected. Inaddition, the control signal AW allows the matching line/word lineselection circuit WMSEL of the associative memory CAMC to select a wordline and connects the word line to a word line of the random accessmemory RAMC. The address ID signal AID is entered to the associativememory CAMC in this state and stored there. The address ADD is enteredto the random access memory RAMC and stored there. If the control signalAW is set to the “LOW level, the association stopping circuit AINHstarts association and the association memory word line selectioncircuit WSEL stops its operation. In addition, the control signal AWallows the matching line/word line selection circuit WMSEL of theassociative memory CAMC to select a matching line and connects thematching line to a word line of the random access memory RAMC. If thedata ID signal DID is entered to the associative memory CAMC in thisstate, an association operation is started and the matching line of thecolumn in which the object ID number is stored is set to the “HIGH”level. Consequently, the address ADp is read from the random accessmemory RAMC. The ID number corresponding to the access-ended address canbe invalidated by resetting the valid flag VALID on the matching line ofthe associative memory CAMC.

Since the order to enter addresses and the order to output data to/froma memory macro can be changed using ID numbers such way, the dataprepared first can be output first. It is thus possible to compose amemory macro provided with an effective cache function easily. Inaddition, the application of such a memory macro will make it possibleto compose a shared memory system using multiprocessor.

The present invention having been described concretely with reference tosome examples is not limited to those examples; it may be modifiedfreely as long as the concept of the present invention is notoverstepped.

Some representative effects of the invention disclosed in thisapplication will be described below briefly.

Concretely, memory macros are stored in a data base as function modulessuch as memory banks, main amplifiers, power supplies, controllers, etc.Such a memory macro provided with various functions or a variable memorycapacity can be composed easily only by combining and disposing thosefunction modules.

Controller functions are provided in each memory bank composing a memorymacro or in a controller for controlling the memory bank, although thosefunctions are provided in or outside a large logic circuit such as amicroprocessor and an image processor conventionally. It is thus easyfor the present invention to design a large logic circuit such as amicroprocessor and an image processor.

Furthermore, a plurality of memory banks can be accessed continuouslyand the data prepared first can be output first, so it is possible toreduce page miss and refresh penalty errors.

What is claimed is:
 1. A semiconductor integrated circuit device havinga memory and a data bus for coupling with a CPU on a semiconductorsubstrate, said memory comprising: a memory cell array; a senseamplifier block connected to said memory cell array; a row decoderconnected to said memory cell array; a column decoded connected to saidsense amplifier block; and a controller for controlling said memory cellarray, said row decoder, said column decoder, and said sense amplifierblock, wherein said controller holds an address in a memory cycle afteranother address is entered in the next memory cycle, wherein saidcontroller compares an address in a memory cycle with another address inthe next memory cycle and makes the data held in said sense amplifierblock output to an outside of said memory without reading data from saidmemory array when both addresses match as a result of said comparison,and wherein said controller further outputs a signal, which indicatesreadiness for data outputting to said data bus and data writing to saidmemory via said data bus, to said CPU.
 2. A semiconductor integratedcircuit device having a plurality of memory banks on a semiconductorsubstrate, each of said plurality of memory banks comprising: a memorycell array; a plurality of bit lines connected to said memory cellarray; a sense amplifier block connected to said memory cell array; arow decoder connected to said memory cell array; a column decoderconnected to said sense amplifier block; and a controller forcontrolling said memory cell array, said row decoder, said columndecoder, and said sense amplifier block, wherein said controller holdsan address in a memory cycle after another address is entered in thenext memory cycle, wherein said controller includes a comparator and thecomparator compares an address in a memory cycle with another address inthe next memory cycle, wherein said plurality of bit lines of saidplurality of memory banks are commonly coupled by a plurality of globalbit lines; wherein said controller further includes an output circuitand said output circuit outputs a first signal which indicates readinessfor data outputting to said plurality of global bit lines from acorresponding one of said plurality of memory banks and data writing tothe corresponding one of said plurality of memory banks via saidplurality of global bit lines.
 3. The semiconductor integrated circuitdevice according to claim 2, wherein said controller makes the data heldin said sense amplifier block output to an outside of the correspondingone of said plurality of memory banks without reading data from saidmemory cell array when a read operation is started for one of saidplurality of memory banks and both addresses compared in said comparatorare equal.
 4. The semiconductor integrated circuit device according toclaim 2, wherein said controller makes data read from said memory cellarray when a read operation is started for one of said plurality ofmemory banks and both addresses compared in said comparator aren'tequal.
 5. The semiconductor integrated circuit device according to claim2, further comprising a plurality of read amplifiers and a plurality ofwrite amplifiers, both read amplifiers and write amplifiers connected tosaid plurality of global bit lines.
 6. The semiconductor integratedcircuit device according to claim 5, further comprising a control unitand said control unit generates second signal to be issued to each ofsaid plurality of memory banks according to said first signal issuedfrom each of said plurality of memory banks.
 7. The semiconductorintegrated circuit device according to claim 6, wherein each of saidplurality of memory banks outputs data to said plurality of global bitlines according to said second signal in a read operation.
 8. Thesemiconductor integrated circuit device according to claim 7, whereinaid control unit generates third signal for selecting one of saidplurality of memory banks.
 9. A semiconductor integrated circuit deviceon a semiconductor substrate, comprising: a first memory and a secondmemory, each having a memory cell array, a sense amplifier blockconnected to said memory cell array, a row decoder connected to saidmemory cell array, a column decoder connected to said sense amplifierblock, and a controller for controlling said memory cell array, said rowdecoder, said column decoder, and said sense amplifier block; and acontrol unit connected to said first and second memories, wherein saidcontrol unit can read data from said first or second memory regardlessof the order of memory accesses.
 10. A semiconductor integrated circuitdevice according to claim 9, wherein said control unit outputs anidentification information corresponding to an input address when theinput address is inputted and outputs said identification informationwhen an information is read out according to the input address.
 11. Asemiconductor integrated circuit device according to claim 9, whereinsaid controller compares a newly entered address with an addresscorresponding to an information held in said sense amplifier blockthrough a past memory access and outputs the information held in saidsense amplifier block without reading information from said memory cellarray when both addresses match as a result of said comparison.
 12. Asemiconductor integrated circuit device according to claim 11, whereinsaid controller can notify the address matching to an outside of saidmemory.
 13. A semiconductor integrated circuit device according to claim9, further comprising: a common bit line that can be connected to thesense amplifier block of said first memory and the sense amplifier blockof said second memory; and a first circuit including an amplifier foramplifying the signal from said sense amplifier through said common bitline and a circuit for transmitting a signal to said sense amplifierblock through said common bit line.
 14. A semiconductor integratedcircuit device according to claim 13, further comprising a secondcircuit including a circuit for generating a voltage used for said firstand second memories and said first circuit.
 15. A semiconductorintegrated circuit device according to claim 14, wherein saidsemiconductor integrated circuit device can change the capacity ofmemory by changing the number of said first or second memory connectedto said first or second circuit.
 16. A semiconductor integrated circuitdevice according to claim 9, further comprising an arithmetic circuit.17. A semiconductor integrated circuit device according to claim 9,wherein said memory cell array comprises DRAM memory cells.
 18. Asemiconductor integrated circuit device having a plurality of memorieson a semiconductor substrate, each of said plurality of memoriescomprising: a memory cell array; a sense amplifier block connected tosaid memory cell array; a row decoder connected to said memory cellarray; a column decoder connected to said sense amplifier block; and acontroller for controlling said memory cell array, said row decoder,said column decoder, and said sense amplifier block, wherein saidsemiconductor integrated circuit device further comprises a common bitline connected to said plurality of memories and a read amplifierconnected to said common bit line, and wherein said controller holdsboth X address and Y address in a memory cycle after an address of thenext memory cycle are entered.
 19. A semiconductor integrated circuitdevice according to claim 18, wherein said controller includes acomparator and said comparator compares both X and Y addresses in amemory cycle with both X and Y addresses in the next memory cycle.
 20. Asemiconductor integrated circuit device according to claim 19, whereinwhen a read operation for one of said plurality of memories are started,said controller makes the data stored in said sense amplifier blockoutput to an outside of said memory without reading data from saidmemory array when X addresses compared in said comparator match, saidcontroller makes the data stored in said sense amplifier block output toan outside of said memory without reading data from said memory arraywhen both X and Y addresses in said comparator match, and saidcontroller makes data read from said memory cell array when X and Yaddresses in both memory cycles do not match.
 21. A semiconductorintegrated circuit device on a semiconductor substrate, comprising: afirst memory and a second memory, each including a memory cell array; asense amplifier block connected to said memory cell array; a row decoderconnected to said memory cell array; a column decoder connected to saidsense amplifier block; and a control circuit for controlling said memorycell array, said row decoder, said column decoder, and said senseamplifier block; a control unit connected to said first and secondmemories; and a processor connected to said control unit, wherein saidcontrol unit can output data to said processor in an order which isdifferent from an order of memory accesses by said processor.
 22. Asemiconductor integrated circuit device on a semiconductor substrate,comprising: a first memory and a second memory, each including a memorycell array; a sense amplifier block connected to said memory cell array;a row decoder connected to said memory cell array; a column decoderconnected to said sense amplifier block; and a control circuit forcontrolling said memory cell array, said row decoder, said columndecoder, and said sense amplifier block; a control unit connected tosaid first and second memories; and a processor connected to saidcontrol unit, wherein said control unit outputs an identificationinformation to said processor according to an input address when theinput address is inputted, wherein said processor holds saididentification information associating with issued address, wherein saidcontrol unit outputs said identification information together with theread information according to said entered address to said processor,and wherein said processor detects a matching between an identificationinformation received together with the information according to anaddress and an identification information held therein.